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  doc. no : qw0905-la rev. : date : 25 - jul. - 2007 10b/12g-pf a data sheet led array la10b/12g-pf lead-free parts pb ligitek electronics co.,ltd. property of ligitek only
note : 1.all dimension are in millimeter tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. lg7120 package dimensions la10b/12g-pf part no. page 1/5 ligitek electronics co.,ltd. property of ligitek only - + 73.0 0.5 ytp 7.0 4.8 1.1 1.0 g gg g gggg 8.5 1.0min 12.5min 6.0 4.0 g ggg 1.5 max 0.5 typ 1.0 12.5min 2.3typ 1.0min 2.9 8.0 3.5 5.0 2.3typ 6.0x11=66.0 + -
-40 ~ +100 tstg storage temperature note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. gap la10b/12g-pf 1.8 1.7 302.6 1.2 green diffused565 green118 material typical electrical & optical characteristics (ta=25 ) part no typ. luminous intensity @10ma(mcd) forward voltage @ ma(v) spectral halfwidth nm peak wave length pnm emittedlens color min.max.min. 20 viewing angle 2 1/2 (deg) page 2/5 reverse current @5v operating temperature peak forward current duty 1/10@10khz absolute maximum ratings at ta=25 forward current power dissipation parameter 30 ma i f t opr ir -40 ~ +85 10 120 100 pd i fp a ma mw g symbol ratings unit ligitek electronics co.,ltd. property of ligitek only part no. la10b/12g-pf
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 typical electro-optical characteristics curve forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) page forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a ligitek electronics co.,ltd. property of ligitek only 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 g chip fig.6 directive radiation 3/5 part no. la10b/12g-pf
dip soldering preheat: 120 c max preheat time: 60seconds max ramp-up 2 c/sec(max) ramp-down:-5 c/sec(max) solder bath:260 c max dipping time:3 seconds max distance:2mm min(from solder joint to case) note:1.wave solder should not be made more than one time. 2.you can just only select one of the soldering conditions as above. 60 seconds max 50 preheat 0 25 0 120 2 /sec max 150 100 time(sec) 260 c3sec max 5 /sec max 260 temp( c) soldering condition(pb-free) 1.iron: soldering iron:30w max temperature 350 c max soldering time:3 seconds max(one time only) distance:2mm min(from solder joint to case) 2.wave soldering profile ligitek electronics co.,ltd. property of ligitek only page 4/5 part no. la10b/12g-pf
the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. this test intended to see soldering well performed or not. this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. the purpose of this test is the resistance of the device under tropical for hours. 1.t.sol=230 5 2.dwell time=5 1sec solderability test 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles thermal shock test 1.t.sol=260 5 2.dwell time= 10 1sec. solder resistance test 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs high temperature high humidity test mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202:103b jis c 7021: b-11 ligitek electronics co.,ltd. property of ligitek only this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. description 1.under room temperature 2.if=20ma 3.t=1000 hrs (-24hrs, +72hrs) operating life test 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) low temperature storage test 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) high temperature storage test reliability test: test condition test item page5/5 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 jis c 7021: b-12 mil-std-883:1008 jis c 7021: b-10 reference standard part no. la10b/12g-pf


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